STU03L07 datasheet(1/6 Pages) DOINGTER

номер детали	STU03L07

подробное описание детали	N-Channel MOSFET uses advanced trench technology

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=70V,ID=56A,RDS(ON)<8.5mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

70

V

VGS

Gate-Source Voltage

±25

V

ID

Continuous Drain Current-TC=25℃

56

A

Continuous Drain Current-TC=100℃

39

IDm

Pulsed Drain Current

1

224

dv/dt

9.8

V/NS

EAS

Single Pulse Avalanche Energy

350

mJ

PD

Power Dissipation,

TC=25℃

64

W

0.43

W/℃

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +175

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

D

S

G

Peak Diode Recovery Voltage

Derating Factor

RƟJC

Thermal Resistance,Junction to Case

1

234

℃/W

STU03L07

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