1

Transistor

2SC5473 (Tentative)

Silicon NPN epitaxial planer type

For low-voltage low-noise high-frequency oscillation

q

q

High gain of 8.9dB and low noise of 1.8dB at 3V.

q

Optimum for RF amplification of a portable telephone and

pager.

q

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Ratings

9

6

1

30

150

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Collector output capacitance

Transition frequency

Noise figure

Foward transfer gain

Symbol

NF

2

Conditions

min

80

typ

0.4

12.0

1.8

8.9

max

1

1

200

Unit

µA

µA

pF

GHz

dB

dB

Unit: mm

1:Emitter

2:Collector

3:Emitter

EIAJ:SC–82

4:Base

S-Mini Type Package

Marking symbol :

3A

2.1

±0.1

1.25

±0.10

0.425

0.425

0.2

±0.1