Transistors

1

2SC5472

Silicon NPN epitaxial planer type

For low-voltage low-noise high-frequency oscillation

I Features

• High transition frequency f

T

• High gain of 8.2 dB and low noise of 1.8 dB at 3 V

• Optimum for RF amplification of a portable telephone and pager

• S-mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

I Absolute Maximum Ratings T

Parameter

Symbol

Rating

Unit

Collector to base voltage

9V

Collector to emitter voltage

6V

Emitter to base voltage

1V

Collector current

30

mA

Collector power dissipation

150

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Marking Symbol: 3A

Unit: mm

0.3

+0.1

–0.0

1

3

2

(0.65) (0.65)

0.15

+0.10

–0.05

10

°

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector cutoff current

µA

Emitter cutoff current

= 1 V, I

C

= 01

µA

Forward current transfer ratio

= 3 V, I

C

= 10 mA

80

200

Transition frequency

12.0

GHz

Collector output capacitance

= 3 V, I

E

= 0, f = 1 MHz

0.6

0.9

pF

Forward transfer gain

| S

21e

= 3 V, I

C

= 10 mA, f = 2 GHz

6.0

8.0

dB

Noise figure

NF

1.8

3.0

dB

I Electrical Characteristics T

1: Base

2: Emitter

EIAJ: SC-70

3: Collector

S-Mini Type Package