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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HB28D032MM2 датащи(PDF) 13 Page - Renesas Technology Corp |
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HB28D032MM2 датащи(HTML) 13 Page - Renesas Technology Corp |
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13 / 90 page  HB28H016/D032/B064/B128MM2 Rev.5.0, Jan. 2003, page 11 of 88 Card Specific Data (CSD) The card specific data register describes how to access the card content. The CSD defines card operating parameters like maximum data access time, data transfer speed. The CSD Fields Name Field Width CSD-slice Value Type CSD structure CSD_STRUCTURE 2 [127:126] “10” read only Spec version SPEC_VERS 4 [125:122] “0011” read only Reserved — 2 [121:120] 0 read only Data read access-time-1 TAAC 8 [119:112] 0x0E (1 ms) read only Data read access-time-2 in CLK cycles (NSAC*100) NSAC 8 [111:104] 0x01 (100 cycles) read only Max. data transfer rate TRAN_SPEED 8 [103:96] 0x2A (20 Mbit/s) read only Card command classes CCC 12 [95:84] 0x0FF (class 0, 1, 2, 3, 4, 5, 6, 7) read only Max. read data block length READ_BLK_LEN 4 [83:80] 0x9 (512 bytes) read only Partial blocks for read allowed READ_BLK_PARTIAL 1 [79:79] ‘1’ (Enabled) read only Write block misalignment WRITE_BLK_MISALIG N 1 [78:78] ‘0’ (Disabled) read only Read block misalignment READ_BLK_MISALIGN 1 [77:77] ‘0’ (Disabled) read only DSR implemented DSR_IMP 1 [76:76] ‘0’ (Disabled) read only Reserved — 2 [75:74] 0 read only Device size C_SIZE 12 [73:62] * 1 read only Max. read current at V DD min VDD_R_CURR_MIN 3 [61:59] * 2 read only Max. read current at V DD max VDD_R_CURR_MAX 3 [58:56] *2 read only Max. write current at V DD min VDD_W_CURR_MIN 3 [55:53] * 2 read only Max. write current at V DD max VDD_W_CURR_MAX 3 [52:50] * 2 read only Device size multiplier C_SIZE_MULT 3 [49:47] * 3 read only Erase group size ERASE_GRP_SIZE 5 [46:42] 0 read only Erase group size multiplier ERASE_GRP_MULT 5 [41:37] 0x0F read only |
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