2SC5346 datasheet(1/2 Pages) PANASONIC

номер детали	2SC5346

подробное описание детали	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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1

Transistor

2SC5346

Silicon NPN epitaxial planer type

For low-frequency high breakdown voltage amplification

Complementary to 2SA1982

s Features

q

Satisfactory linearity of forward current transfer ratio hFE.

q

High collector to emitter voltage VCEO.

q

Small collector output capacitance Cob.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

MT2 Type Package

2.5

±0.1

2.5

±0.5 2.5±0.5

6.9

±0.1

1.05

±0.05

(1.45)

4.0

0.7

0.8

0.65 max.

0.45

+0.1

–0.05

3

2

1

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

*1

Tj

Tstg

Ratings

150

5

100

50

1.0

150

–55 ~ +150

Unit

V

mA

W

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Noise voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

VCEO

VEBO

hFE

*1

VCE(sat)

NV

fT

Cob

Conditions

VCB = 100V, IE = 0

IC = 0.1mA, IB = 0

IE = 10µA, IC = 0

VCE = 5V, IC = 10mA

IC = 30mA, IB = 3mA

VCE = 10V, IC = 1mA, GV = 80dB

Rg = 100kΩ, Function = FLAT

VCB = 10V, IE = –10mA, f = 200MHz

VCB = 10V, IE = 0, f = 1MHz

min

150

5

130

typ

150

160

max

1

330

1

300

5

Unit

µA

V

mV

MHz

pF

*1 Printed circuit board: Copper foil area of 1cm2 or more, and the board

thickness of 1.7mm for the collector portion

*1h

FE Rank classification

Rank

R

S

hFE

130 ~ 220

185 ~ 330

1.2

±0.1

0.65

max.

0.45 0.1

0.05

+

–

Note: In addition to the

lead type shown in

the upper figure, the

type as shown in

the lower figure is

also available.

(HW type)

Аналогичный номер детали - 2SC5346

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SC5346	37Kb / 2P	Silicon PNP epitaxial planer type

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Аналогичное описание - 2SC5346

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SC2631	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
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	2SC4715	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC5190	37Kb / 2P	Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)
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	2SD1030	37Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency amplification)
	2SD1821	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
	2SD662	39Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)
	2SD814	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
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