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SSD9971 датащи(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

номер детали SSD9971
подробное описание детали  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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производитель  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
домашняя страница  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SSD9971 датащи(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Maximum Pulsed Drain to Source Diode Forward Current
Source Charge
www.doingter.cn
—
2 —
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
60
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=60V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
3
V
Drain-Source On Resistance
VGS=10V,ID=10A
---
26
36
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
1150
---
pF
Coss
Output Capacitance
---
55
---
Crss
Reverse Transfer Capacitance
---
45.3
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=30V, ID=15A,
VGS=10V,RGEN=1.8Ω
---
7.6
---
ns
tr
Rise Time
---
20
---
ns
td(off)
Turn-Off Delay Time
---
15
---
ns
tf
Fall Time
---
24
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=30V,
ID=10A
---
20.3
---
nC
Qgs
Gate-
---
3.7
---
nC
Qgd
Gate-Drain “Miller” Charge
---
5.3
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=20A
---
---
1.2
V
Is
---
20
A
1.6
RDS(on)
VGS=4.5V,ID=5A
---
36
45
mΩ
note3
Maximum Continuous Drain to Source Diode Forward Current
---
ISM
---
80
A
---
SSD9971



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