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2SC5243 датащи(PDF) 1 Page - Panasonic Semiconductor

номер детали 2SC5243
подробное описание детали  Silicon NPN triple diffusion mesa type(For horizontal deflection output)
PDF  2 Pages
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производитель  PANASONIC [Panasonic Semiconductor]
домашняя страница  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC5243 датащи(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
Conditions
VCB = 1700V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10A
IC = 10A, IB = 2.8A
IC = 10A, IB = 2.8A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 12A, IB1 = 2.4A, IB2 = –4.8A,
Resistance loaded
min
5
typ
3
1.5
0.12
max
1
50
12
3
1.5
2.5
0.2
Unit
µA
µA
V
V
MHz
µs
µs
2SC5243
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s Features
q
High breakdown voltage, and high reliability through the use of a
glass passivation layer
q
High-speed switching
q
Wide area of safe operation (ASO)
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Peak base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VEBO
IC
ICP
*
IBP
PC
Tj
Tstg
Ratings
1700
1700
6
15
30
10
200
3.5
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
TC=25°C
Ta=25
°C
*Non-repetitive peak
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0
±0.5
10.9
±0.5
123
2.0
±0.3
3.0
±0.3
1.0
±0.2
5.0
±0.3
3.0
5.45
±0.3
0.6
±0.2
1.5
2.7
±0.3
1.5
φ 3.3±0.2


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