1

Transistor

2SC5216

Silicon NPN epitaxial planer type

For high-frequency amplification/oscillation/mixing

q

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

JEDEC:TO–236

2:Emitter

EIAJ:SC–59

3:Collector

Mini Type Package

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65

±0.15

0.65

±0.15

3

1

2

0.4

±0.2

0.1 to 0.3

Symbol

Ratings

15

8

3

50

200

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Parameter

Emitter cutoff current

Collector to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

Transition frequency

Collector output capacitance

Common emitter reverse transfer capacitance

Power gain

Symbol

PG

Conditions

min

15

100

0.8

0.6

14

0.6

typ

0.7

1.3

1.0

0.4

18

max

2

350

0.5

1.9

1.4

22

1.5

Unit

µA

V

V

V

GHz

pF

pF

dB

Marking symbol :

FB