TSM9409CSRL datasheet(1/9 Pages) VBSEMI

номер детали	TSM9409CSRL

подробное описание детали	P-Channel 60 V (D-S) MOSFET

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P-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET® power MOSFET

• 100 % Rg and UIS tested

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

b. When mounted on 1" square PCB (FR-4 material).

c. Parametric verification ongoing.

PRODUCT SUMMARY

VDS (V)

-60

RDS(on) (

Ω) at VGS = -10 V

0.050

RDS(on) (

Ω) at VGS = -4.5 V

0.060

ID (A) per leg

-8

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

-60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

TC = 25 °C

ID

-8

A

TC = 125 °C

-4.75

Continuous Source Current (Diode Conduction)

IS

-4.5

Pulsed Drain Current a

IDM

-32

Single Pulse Avalanche Current

L = 0.1 mH

IAS

-22.4

Single Pulse Avalanche Energy

EAS

25

mJ

Maximum Power Dissipation a

TC = 25 °C

PD

5

W

TC = 125 °C

1.67

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mount b

RthJA

110

°C/W

Junction-to-Foot (Drain)

RthJF

30

S

G

D

P-Channel MOSFET

S

D

S

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

TSM9409CS RL

1

Аналогичный номер детали - TSM9409CSRL

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Аналогичный номер детали - TSM9409CSRL

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