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TSM9409CS датащи(PDF) 2 Page - VBsemi Electronics Co.,Ltd

номер детали TSM9409CS
подробное описание детали  P-Channel 60 V (D-S) MOSFET
PDF  9 Pages
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производитель  VBSEMI [VBsemi Electronics Co.,Ltd]
домашняя страница  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

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Notes
a. Pulse test; pulse width
≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = -250 μA
-60
-
-
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 μA
-1
.0
-2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = -60 V
--
-1
μA
VGS = 0 V
VDS = -60 V, TJ = 125 °C
--
-50
VGS = 0 V
VDS = -60 V, TJ = 175 °C
--
-150
On-State Drain Current a
ID(on)
VGS = -10 V
VDS
≤ -5 V
-30
-
-
A
Drain-Source On-State Resistance a
RDS(on)
VGS = -10 V
ID = -4.3 A
-
0.050
Ω
VGS = -10 V
ID = -4.3 A, TJ = 125 °C
-
0.070
VGS = -10 V
ID = -4.3 A, TJ = 175 °C
-
0.080
VGS = -4.5 V
ID = -3.8 A
-
0.060
Forward Transconductance b
gfs
VDS = -15 V, ID = -4.3 A
-13
-
S
Dynamicb
Input Capacitance
Ciss
VGS = 0 V
VDS = -30 V, f = 1 MHz
-
1530
1910
pF
Output Capacitance
Coss
-
334
417
Reverse Transfer Capacitance
Crss
-
114
142
Total Gate Charge c
Qg
VGS = -10 V
VDS = -30 V, ID = -5 A
-43.4
65
nC
Gate-Source Charge c
Qgs
-4.7
-
Gate-Drain Charge c
Qgd
-9
-
Gate Resistance
Rg
f = 1 MHz
1.3
2.5
4
Ω
Turn-On Delay Time c
td(on)
VDD = -30 V, RL = 8.8
Ω
ID
≅ -5 A, VGEN = -10 V, Rg = 1 Ω
-11
17
ns
Rise Time c
tr
-11
17
Turn-Off Delay Time c
td(off)
-35
52
Fall Time c
tf
-6
9
Source-Drain Diode Ratings and Characteristicsb
Pulsed Current a
ISM
--
-32
A
Forward Voltage
VSD
IF = -2.8 A, VGS = 0 V
-
-0.8
-1.2
V
-
-
-
-
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
TSM9409CS RL
2



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