1

Power Transistors

2SC5121

Silicon NPN triple diffusion planar type

For general amplification

q

q

q

q

TO-126 package, which is fitted to a heat sink without any insu-

lation parts

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

Ratings

400

400

7

100

70

1.2

150

–55 to +150

Unit

V

V

V

mA

mA

W

˚C

˚C

Parameter

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Conditions

min

400

7

30

50

typ

80

4

max

10

10

150

1.2

8

Unit

µA

µA

V

V

V

MHz

pF

Unit: mm

1:Emitter

2:Collector

3:Base

JEDEC:TO–126(b)

3.2

±0.2

0.5

±0.1

0.75

±0.1

0.5

±0.1

1.76

±0.1

8.0

+0.5

–0.1

1

4.6

±0.2

2.3

±0.2

3

2

φ3.16±0.1