Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

-1.0

-1.5

-2.5

V

Drain-Source On-State Resistance

30A

-

6

9

mΩ

Forward Transconductance

30A

30

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

3960

-

PF

Output Capacitance

-

486

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

268

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

20

-

nS

Turn-on Rise Time

-

13

-

nS

Turn-Off Delay Time

-

55

-

nS

Turn-Off Fall Time

20A,

-

21

-

nS

Total Gate Charge

-

65

-

nC

Gate-Source Charge

-

12

-

nC

Gate-Drain Charge

-

14

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

50A

-

-

-1.2

V

Notes

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

HM100P03