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2SC5063 датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SC5063 датащи(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() 1 Power Transistors 2SC5063 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Ratings 500 500 400 7 3 1.5 0.5 25 1.3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.8A IC = 0.8A, IB = 0.16A IC = 0.8A, IB = 0.16A VCE = 10V, IC = 0.2A, f = 10MHz IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A, VCC = 150V min 400 15 8 typ 25 max 100 100 1 1.5 0.7 2 0.3 Unit µA µA V V V MHz µs µs µs Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5 ±0.2 6.0 ±0.5 1.5max. 0.8 ±0.1 5.08 ±0.5 2.54 ±0.3 1.1max. 0.5max. 1.0 ±0.1 3.4 ±0.3 2 13 Unit: mm 8.5 ±0.2 6.0 ±0.3 3.4 ±0.3 2.54 ±0.3 5.08 ±0.5 1.0 ±0.1 0.8 ±0.1 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS) |
Аналогичный номер детали - 2SC5063 |
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Аналогичное описание - 2SC5063 |
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