2SC5032 datasheet(1/3 Pages) PANASONIC

номер детали	2SC5032

подробное описание детали	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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1

Power Transistors

2SC5032

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

s Features

q

High-speed switching

q

High collector to base voltage VCBO

q

Wide area of safe operation (ASO)

q

Satisfactory linearity of foward current transfer ratio hFE

q

Full-pack package with outstanding insulation, which can be in-

stalled to the heat sink with one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

500

400

7

6

3

1.2

30

2

150

–55 to +150

Unit

V

A

W

˚C

TC=25°C

Ta=25

°C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 500V, IE = 0

VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 5V, IC = 0.1A

VCE = 2V, IC = 1.2A

IC = 1.5A, IB = 0.3A

VCE = 10V, IC = 0.2A, f = 1MHz

IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,

VCC = 200V

min

400

10

8

typ

10

max

100

40

1.0

1.5

1.0

3.0

0.3

Unit

µA

V

MHz

µs

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220E Full Pack Package

9.9

±0.3

23

1

4.6

±0.2

2.9

±0.2

2.6

±0.1

2.54

±0.2

0.75

±0.1

1.2

±0.15

5.08

±0.4

φ3.2±0.1

1.45

±0.15

0.7

±0.1

7

°

Аналогичный номер детали - 2SC5032

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC503	464Kb / 3P	HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
	2SC5030	193Kb / 3P	NPN EPITAXIAL TYPE (STOROBE FLASH, MUDIUM POWER AMPLIFIER APPLICATIONS)
	2SC5030	146Kb / 5P	Strobe Flash Applications
	2SC5030	146Kb / 5P	Strobe Flash Applications
Panasonic Semiconductor	2SC5034	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

More results

Аналогичное описание - 2SC5032

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SC3795	63Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3970	60Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3973	60Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3975	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC4152	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC4985	40Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5034	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5063	62Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5393	34Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5457	37Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

More results

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Аналогичный номер детали - 2SC5032

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