MMBT4401 datasheet(2/5 Pages) LEIDITECH

2 / 5 page

●ELECTRICAL CHARACTERISTICS (Ta= 25℃)

OFF CHARACTERISTICS

Symbol

Min.

Typ.

Max.

(IC = 1.0 mAdc, I B = 0)

–

VBR(CBO)

(I C = 0.1mAdc, I E = 0)

–

Emitter–Base Breakdown Voltage

VBR(EBO)

(I E = 0.1mAdc, I C = 0)

–

ICEX

( V CE = 35 Vdc, V EB = 0.4Vdc)

–

0.1

Base Cutoff Current

IBEV

( V CE = 35 Vdc, V EB = 0.4Vdc)

–

0.1

ON CHARACTERISTICS (Note 3.)

hFE

(I C = 0.1 mAdc, V CE = 1.0 Vdc)

–

(I C = 1.0 mAdc, V CE = 1.0 Vdc)

–

(I C = 10 mAdc, V CE = 1.0 Vdc)

–

(I C = 150 mAdc, V CE = 1.0 Vdc)

100

–

300

(I C = 500 mAdc, V CE = 2.0 Vdc)

–

(I C = 150 mAdc, I B = 15 mAdc)

–

0.4

(I C = 500mAdc, I B = 50 mAdc)

–

0.75

(I C = 150 mAdc, I B = 15 mAdc)

0.75

0.95

(I C = 500mAdc, I B = 50 mAdc)

–

1.2

SMALL–SIGNAL CHARACTERISTICS

Symbol

Min.

Typ.

Max.

(I C = 20mAdc, V CE= 20Vdc, f = 100MHz)

250

–

Ccb

(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)

–

6.5

Ceb

(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)

–

Input Impedance

hie

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)

Voltage Feedback Ratio

hre

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)

0.1

–

Small–Signal Current Gain

hfe

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)

500

Output Admittance

hoe

(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Delay Time

–

Rise Time

–

Storage Time

–

225

Fall Time

–

3. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%.

DC Current Gain

Collector Cutoff Current

Collector–Base Breakdown Voltage

Emitter–Base Capacitance

Collector–Base Capacitance

Current–Gain — Bandwidth Product

Characteristic

Collector–Emitter Saturation Voltage(3)

(V CC = 30 Vdc, V EB=

2.0Vdc,I C = 150 mAdc, I

= 15 mAdc)

(V CC = 30 Vdc, I C =

150 mAdc,I B1 = I B2 =

15 mAdc)

Unit

MHz

X 10

–4

μmhos

μA

VCE(sat)

Characteristic

Unit

Collector–Emitter Breakdown Voltage

VBR(CEO)

Base–Emitter Saturation Voltage

VBE(sat)

Ω

Rev :

www.leiditech.com

01.06.2014

2/5

MMBT4401

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