2SC5018 datasheet(1/2 Pages) PANASONIC

номер детали	2SC5018

подробное описание детали	Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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1

Transistor

2SC5018

Silicon NPN triple diffusion planer type

For high breakdown voltage high-speed switching

s Features

q

High collector to base voltage VCBO.

q

High emitter to base voltage VEBO.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

MT2 Type Package

2.5

±0.1

2.5

±0.5 2.5±0.5

6.9

±0.1

1.05

±0.05

(1.45)

4.0

0.7

0.8

0.65 max.

0.45

+0.1

–0.05

3

2

1

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

*

Tj

Tstg

Ratings

500

400

7

1.5

0.8

1

150

–55 ~ +150

Unit

V

A

W

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fill time

Symbol

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 500V, IE = 0

VEB = 7V, IC = 0

VCE = 5V, IC = 10mA

VCE = 5V, IC = 300mA

*1

IC = 100mA, IB = 10mA

*1

IC = 100mA, IB = 10mA

*1

VCB = 10V, IE = –50mA, f = 10MHz

IC = 200mA, IB1 = 40mA

IB2 = –40mA, VCC = 150V

min

50

10

typ

0.1

0.8

20

0.7

4.0

0.4

max

100

300

0.5

1.0

Unit

µA

V

MHz

µs

* Printed circuit board: Copper foil area of 1cm2 or more, and the board

thickness of 1.7mm for the collector portion

*1 Pulse measurement

1.2

±0.1

0.65

max.

0.45 0.1

0.05

+

–

Note: In addition to the

lead type shown in

the upper figure, the

type as shown in

the lower figure is

also available.

(HW type)

Аналогичный номер детали - 2SC5018

производитель	номер детали	датащи	подробное описание детали
NEC	2SC5010	61Kb / 10P	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Renesas Technology Corp	2SC5010	241Kb / 12P	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
California Eastern Labs	2SC5010	1Mb / 9P	NPN SILICON EPITAXIAL TRANSISTOR
NEC	2SC5010-T1	61Kb / 10P	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Renesas Technology Corp	2SC5010-T1	241Kb / 12P	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

More results

Аналогичное описание - 2SC5018

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SC3743	56Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3795	63Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3972	60Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3977	60Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC4004	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC4985	40Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5034	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5063	62Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5393	34Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5457	37Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

More results

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Аналогичный номер детали - 2SC5018

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