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2SC4985 датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SC4985 датащи(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page ![]() 1 Power Transistors 2SC4985 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High collector to base voltage VCBO q High collector to emitter VCEO q Allowing automatic insertion with radial taping s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 900 800 7 2 1 1.5 150 –55 to +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 50mA VCE = 5V, IC = 500mA IC = 200mA, IB = 40mA IC = 200mA, IB = 40mA VCB = 10V, IE = –50mA, f = 200MHz IC = 200mA, IB1 = 40mA, IB2 = –80mA, VCC = 250V min 800 6 3 typ 80 max 50 50 1.5 1 1 3 1 Unit µA µA V V V MHz µs µs µs Unit: mm 1:Emitter 2:Collector 3:Base MT3 Type Package 7.5 ±0.2 4.5 ±0.2 90 ° 0.8C 0.8C 0.4 ±0.1 0.8C 123 0.5 ±0.1 0.7 ±0.1 1.0 ±0.1 0.85 ±0.1 0.65 ±0.1 0.7 ±0.1 2.5 ±0.2 2.5 ±0.2 2.05 ±0.2 |
Аналогичный номер детали - 2SC4985 |
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Аналогичное описание - 2SC4985 |
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