LMBT2222AL datasheet(3/6 Pages) LEIDITECH

номер детали	LMBT2222AL

подробное описание детали	General Purpose Transistors NPN Silicon

PDF	6 Pages

Scroll/Zoom	100%

производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

Logo

3 / 6 page

●ELECTRICAL CHARACTERISTICS (Ta= 25℃)

SMALL–SIGNAL CHARACTERISTICS

Symbol

Min.

Typ.

Max.

Unit

MHz

(I C = 20mAdc, V CE= 20Vdc, f = 100MHz)

300

–

Cobo

(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)

–

Cibo

(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)

–

Input Impedance

hie

(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)

0.25

1.25

Voltage Feedback Ratio

hre

X 10

–4

(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)

–

Small–Signal Current Gain

hfe

(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)

–

375

Output Admittance

hoe

μmhos

(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)

–

200

Collector Base Time Constant

rb,Cc

(V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz)

–

150

Noise Figure

(VCE=10V, IC

=100μA, RS=1.0k , f =1.0kHz)

–

SWITCHING CHARACTERISTICS

Delay Time

–

Rise Time

–

Storage Time

–

225

Fall Time

–

4.fT is defined as the frequency at which hfe extrapolates to unity.

Characteristic

Current–Gain — Bandwidth Product(4)

Output Capacitance

Input Capacitance

(V CC = 30 Vdc, V EB(off)

= – 0.5 Vdc,I C = 150

mAdc, I B1 = 15 mAdc)

(V CC = 30 Vdc, I C =

150 mAdc,I B1 = I B2 =

15 mAdc)

Ω

Rev : 01.06.2014

3/6

www.leiditech.com

LMBT2222AL

LMBT2222AL датащи(PDF) 3 Page - Shanghai Leiditech Electronic Technology Co., Ltd

LMBT2222AL датащи(HTML) 3 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL