UT3P01ZG-AE2-R datasheet(1/7 Pages) VBSEMI

номер детали	UT3P01ZG-AE2-R

подробное описание детали	P-Channel 60 V (D-S) MOSFET

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P-Channel 60 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

High-Side Switching

• Low On-Resistance: 3



•

Low Threshold: - 2 V (typ.)

•

Fast Swtiching Speed: 20 ns (typ.)

•

Low Input Capacitance: 20 pF (typ.)

•

Compliant to RoHS Directive 2002/95/EC

Notes:

a. Surface mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()VGS(th) (V)

ID (mA)

- 60

3 at VGS = - 10 V

- 1 to - 3

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Currenta

TA = 25 °C

ID

- 500

mA

TA = 100 °C

- 350

Pulsed Drain Currentb

IDM

-1500

Power Dissipationa

TA = 25 °C

PD

460

mW

TA = 100 °C

240

Maximum Junction-to-Ambienta

RthJA

350

°C/W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

G

TO-236

(SOT-23)

S

D

2

3

1

S

G

D

P-Channel MOSFET

-500

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UT3P01ZG-AE2-R

1

Аналогичный номер детали - UT3P01ZG-AE2-R

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UT3P01ZG-AE2-R датащи(PDF) 1 Page - VBsemi Electronics Co.,Ltd

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Аналогичный номер детали - UT3P01ZG-AE2-R

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