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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HM2N70 датащи(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM2N70 датащи(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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2 / 8 page  2 N- N- N- N-沟道功率 MOS MOS MOS MOS 管//// N-C N-C N-C N-CHANNEL HANNEL HANNEL HANNEL POWER POWER POWER POWER MOSFET 参数 PARAMETER PARAMETER PARAMETER PARAMETER 符号 SYMBOL SYMBOL SYMBOL SYMBOL 测试条件 TEST TEST TEST TEST CONDITION CONDITION CONDITION CONDITION 最小值 MIN MIN MIN MIN 典型值 TYP TYP TYP TYP 最大值 MAX MAX MAX MAX 单位 UNIT UNIT UNIT UNIT 栅极漏电流 Gate-body Leakage Current (VDS = 0) IGSS VGS =±30V ±100 nA 漏-源导通电阻 Static Drain-source On Resistance RDS(ON) VGS =10V, ID=1A ③ ③ ③ ③ 5.5 6.5 Ω 输入电容 Input Capacitance Ciss VGS = 0V, VDS = 25V F = 1.0MHZ 311 pF 关断延迟 Turn -Off Delay Time Td(off) VDD=300V, ID =2.0A RG=25Ω ③ ③ ③ ③ 24 ns 栅极电荷 Total Gate Charge Qg ID =2.0A, VDS = 560V VGS = 10V ③ ③ ③ ③ 14.5 nC 栅源电荷 Gate-to-Source Charge Qgs 1.8 nC 栅漏电荷 Gate-to-Drain Charge Qgd 8..3 nC 二极管正向电流 Continuous Diode Forward Current IS 2.0 A 二极管正向压降 Diode Forward Voltage VSD Tj=25°C, Is=2.0A VGS =0V ③ ③ ③ ③ 1.4 V 反向恢复时间 Reverse Recovery Time trr Tj=25°C,If=2.0A di/dt=100A/μs ③ ③ ③ ③ 380 ns 反向恢复电荷 Reverse Recovery Charge Qrr 0.9 uC ●热特性 ●Thermal Thermal Thermal Thermal Characteristics Characteristics Characteristics Characteristics 参数 PARAMETER PARAMETER PARAMETER PARAMETER 符号 SYMBOL SYMBOL SYMBOL SYMBOL 最大值 MAX MAX MAX MAX 最大值 MAX MAX MAX MAX 单位 UNIT UNIT UNIT UNIT TO-2 TO-2 TO-2 TO-220 20 20 20 TO-251/251S/252 TO-251/251S/252 TO-251/251S/252 TO-251/251S/252/220FP /220FP /220FP /220FP 热阻结-壳 Thermal Resistance Junction-case RthJC 2.5 4.46 ℃/W 热阻结-环境 Thermal Resistance Junction-ambient RthJA 110.0 110.0 ℃/W 注释((((Notes Notes Notes Notes)))):::: ① ① ① ① 脉冲宽度：以最高结温为限制 Repetitive rating: Pulse width limited by maximum junction temperature ② ② ② ② 初始结温=25oC, VDD =50V, L=56mH, RG =25Ω, IAS=2.0A Starting Tj=25oC, VDD =50V, L=56mH, RG =25Ω, IAS=2.0A ③ ③ ③ ③ 脉冲测试：脉冲宽度≤ 300μs ，占空比≤ 2 ％ Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% |
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