FTK4435 datasheet(2/4 Pages) FS

номер детали	FTK4435

подробное описание детали	High Power and current handing capability

PDF	4 Pages

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производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

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2 / 4 page

FTK4435

2017. 01. 02

2/4

Revision No : 1

Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain Source Breakdown Voltage

V(BR)DSS VGS=0V,ID=-250µA

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-1

µA

Gate body Leakage

lGSS

VDS=0V, VGS=±20V

±100

Gate Threshold Voltage

VGS(th)

VDS =VGS, ID =-250µA

-1

-3

VGS =-10V, ID =-9.1A

Drain-Source on-state Resistance

(note 2)

RDS(on

)

VGS =-4.5V, ID =-6.9A

mΩ

Forward Transconductance (note 2)

gFs

VDS =-10V, ID =-9.1A

Dynamic Characteristics (note 3)

Input Capacitance

Ciss

1350

Output Capacitance

Coss

215

Reverse Transfer Capacitance

Crss

VDS =-15V,VGS =0V,f =1MHz

185

VDS =-15V,VGS =-10V,ID =-9.1A

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS =-15V,VGS =-4.5V,ID =-9.1A

7.5

Gate Resistance

f =1MHz

5.8

Ω

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

VDD=-15V,RL=15Ω

ID =-1A,VGEN=-10V,RG=1Ω

Drain-Source Body Diode Characteristics

Diode Forward Voltage

VSD

IS=-2A,VGS=0V

-1.2

Notes:

1. Surface mounted on 1”×1” FR4 board.

2. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤2%.

3. Guaranteed by design, not subject to production testing.

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