FTK1012C datasheet(2/4 Pages) FS

номер детали	FTK1012C

подробное описание детали	N-Channel Power MOSFET

PDF	4 Pages

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производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

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FTK1012C

2021. 03. 03

2/4

Revision No : 0

Drain-Source Breakdown Voltage

at ID = 250 µA

BVDSS

Gate-Source Threshold Voltage

at VDS = VGS, ID = 250 µA

VGSth

0.5

0.95

Drain-Source Leakage Current

at VDS = 20 V

IDSS

µA

Gate Leakage Current

at VGS = ± 8 V

at VGS = ± 4.5 V

IGSS

± 2

± 0.5

µA

Drain-Source On-State Resistance

at VGS = 4.5 V, ID = 0.5 A

at VGS = 2.5 V, ID = 0.4 A

at VGS = 1.8 V, ID = 0.1 A

RDS(on)

380

620

1100

mΩ

Forward Transconductance

at VDS = 10 V, ID = 0.2 A

│gFS│

1.6

Input Capacitance

at VGS = 0 V, VDS = 10 V, f = 1 MHz

Ciss

Output Capacitance

at VGS = 0 V, VDS = 10 V, f = 1 MHz

Coss

Reverse Transfer Capacitance

at VGS = 0 V, VDS = 10 V, f = 1 MHz

Crss

Turn-On Delay Time

at VGS = 4.5 V, VDS = 10 V, RL = 250 Ω, RG = 6 Ω

ton

Turn-On Rise Time

at VGS = 4.5 V, VDS = 10 V, RL = 250 Ω, RG = 6 Ω

Turn-Off Delay Time

at VGS = 4.5 V, VDS = 10 V, RL = 250 Ω, RG = 6 Ω

toff

172

Turn-Off Fall Time

at VGS = 4.5 V, VDS = 10 V, RL = 250 Ω, RG = 6 Ω

toff

Diode Forward Voltage

at IS = 0.3 A, VGS = 0 V

VSD

0.48

1.2

Electrical Characteristics( Ta = 25℃)

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