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FTK2N60P датащи(PDF) 3 Page - First Silicon Co., Ltd

номер детали FTK2N60P
подробное описание детали  2 Amps, 600 Volts N-CHANNEL MOSFET
PDF  7 Pages
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производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK2N60P датащи(HTML) 3 Page - First Silicon Co., Ltd

  FTK2N60P Datasheet HTML 1Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 2Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 3Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 4Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 5Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 6Page - First Silicon Co., Ltd FTK2N60P Datasheet HTML 7Page - First Silicon Co., Ltd  
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ELECTRICAL CHARACTERISTICS
tD (ON)
10
ns
tR
30
ns
tD(OFF)
30
ns
tF
VDD =300V, ID =2.0A, RG=25Ω
(Note 1,2)
30
ns
QG
10
nC
QGS
1.5
nC
QGD
VDS=480V, VGS=10V, ID=2.0A
(Note 1, 2)
5
nC
VSD
VGS = 0 V, ISD = 2.0 A
1.5
V
ISD
2.0
A
ISM
8.0
A
tRR
250
ns
QRR
VGS = 0 V, ISD = 2.0A,
di/dt = 100 A/µs (Note1)
1.0
µC
Note: 1. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
2011. 08. 25
3/7
FTK2N60P / F / D / I
Revision No : A
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Timee
Reverse Recovery Charge
MAX
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(TJ = 25˚C , unless Otherwise specified.)



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