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TC210 датащи(PDF) 1 Page - Texas Instruments

номер детали TC210
подробное описание детали  192- x 165-PIXEL CCD IMAGE SENSOR
PDF  13 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
Logo TI - Texas Instruments

TC210 датащи(HTML) 1 Page - Texas Instruments

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TC210
192-
× 165-PIXEL CCD IMAGE SENSOR
SOCS009B – OCTOBER 1986 – REVISED MAY 1990
Copyright
© 1990, Texas Instruments Incorporated
2-3
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
• Full-Frame Operation
• Antiblooming Capability
• Single-Phase Clocking for Horizontal and
Vertical Transfers
• Fast Clear Capability
• Dynamic Range...60 dB Typical
• High Blue Response
• High Photoresponse Uniformity
• Solid-State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
• 6-Pin Dual-In-Line Ceramic Package
• Square Image Area:
– 2640
µm by 2640 µm
– 192 Pixels (H) by 165 Pixels (V)
– Each Pixel 13.75
µm (H) by 16 µm (V)
description
The TC210 is a full-frame charge-coupled device (CCD) image sensor designed specifically for medical and
industrial applications requiring ruggedness and small size. The image-sensing area is configured into 165
horizontal lines each containing 192 pixels. Twelve additional pixels are provided at the end of each line to
establish a dark reference and line clamp. The antiblooming feature is activated by supplying clock pulses to
the antiblooming gate, an integral part of each image-sensing element. The charge is converted to signal voltage
at 4
µV per electron by a high-performance structure with built-in automatic reset and a voltage-reference
generator. The signal is further buffered by a low-noise two-stage source-follower amplifier to provide high
output-drive capability.
The TC210 is supplied in a 5-mm (0.20-in) diameter ceramic and clear plastic molded package with a glass
window. The glass window can be cleaned using any standard method for cleaning optical assemblies or by
wiping the surface with a cotton swab soaked in alcohol.
The TC210 is characterized for operation from – 10
°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
ADB 3
VSS 2
ABG 1
4 OUT
5 SRG
6 IAG
DUAL-IN-LINE PACKAGE
(TOP VIEW)
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.


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