| поискавой системы для электроныых деталей |
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2SC4208 датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SC4208 датащи(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() 1 Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A s Features q Low collector to emitter saturation voltage VCE(sat). q Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base TO–92NL Package 5.0 ±0.2 1.27 123 1.27 4.0 ±0.2 0.45 +0.15 –0.1 0.45 +0.15 –0.1 0.7 ±0.1 2.54 ±0.15 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 30 60 25 50 7 1 500 1 150 –55 ~ +150 Unit V V V A mA W ˚C ˚C 2SC4208 2SC4208A 2SC4208 2SC4208A s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE1 *1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 10mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA *2 VCE = 10V, IB = 500mA *2 IC = 300mA, IB = 30mA IC = 300mA, IB = 30mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 30 60 25 50 7 85 40 typ 0.35 1.1 150 6 max 0.1 340 0.6 1.5 15 Unit µA V V V V V MHz pF *1h FE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 *2 Pulse measurement 2SC4208 2SC4208A 2SC4208 2SC4208A |
Аналогичный номер детали - 2SC4208 |
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Аналогичное описание - 2SC4208 |
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