2SC4152 datasheet(1/3 Pages) PANASONIC

номер детали	2SC4152

подробное описание детали	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

PDF	3 Pages

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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1

Power Transistors

2SC4152

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

s Features

q

High-speed switching

q

High collector to base voltage VCBO

q

Wide area of safe operation (ASO)

q

Satisfactory linearity of foward current transfer ratio hFE

q

Full-pack package which can be installed to the heat sink with

one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCER

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

1400

700

5

1.0

0.3

20

2

150

–55 to +150

Unit

V

A

W

˚C

TC=25°C

Ta=25

°C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCER

VCEO

VEBO

hFE

VCE(sat)

VBE(sat)

fT

Cob

ton

tstg

tf

Conditions

VCB = 1100V, IE = 0

VEB = 4V, IC = 0

IC = 1mA, RBE = 100Ω

IC = 1mA, IB = 0

IE = 1mA, IC = 0

VCE = 5V, IC = 30mA

IC = 60mA, IB = 6mA

VCE = 10V, IC = 30mA, f = 1MHz

VCB = 100V, IE = 0, f = 1MHz

IC = 0.15A, IB1 = 15mA, IB2 = –30mA,

VCC = 250V

min

1400

700

5

10

typ

12

6

max

10

40

2

3

1

Unit

µA

V

MHz

pF

µs

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1

Аналогичный номер детали - 2SC4152

производитель	номер детали	датащи	подробное описание детали
Shindengen Electric Mfg...	2SC4150	396Kb / 8P	Switching Power Transistor(12A NPN)
Savantic, Inc.	2SC4150	223Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC4150	153Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC4150	129Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	2SC4150	224Kb / 3P	Silicon NPN Power Transistors

More results

Аналогичное описание - 2SC4152

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SC3743	56Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3795	63Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3970	60Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3973	60Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3975	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC4985	40Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5034	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5063	62Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5393	34Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
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More results

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