UTT30N06L-TN3-R datasheet(1/6 Pages) VBSEMI

номер детали	UTT30N06L-TN3-R

подробное описание детали	N-Channel 6 0-V (D-S) MOSFET

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FEATURES

•

TrenchFET® Power MOSFET

•

175 °C Junction Temperature

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

a

60

0.025 at VGS = 10 V

35

0.030 at VGS = 4.5 V

30

TO-252

S

GD

Top View

Drain Connected to Tab

N-Channel MOSFET

G

D

S

Notes:

a. Surface Mounted on 1" x 1" FR4 board, t

≤ 10 sec.

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

VGS

± 20

V

Continuous Drain Current (TJ = 175 °C)

b

TC = 25 °C

ID

35

A

TC = 100 °C

28

Pulsed Drain Current

IDM

100

Continuous Source Current (Diode Conduction)

IS

23

Avalanche Current

IAS

20

Single Avalanche Energy (Duty Cycle

≤ 1 %)

L = 0.1 mH

EAS

20

mJ

Maximum Power Dissipation

TC = 25 °C

PD

100

W

TA = 25 °C

3a

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 sec

RthJA

18

22

°C/W

Steady State

40

50

Maximum Junction-to-Case

RthJC

3.2

4

Available

RoHS*

COMPLIANT

N-Channel 6 0-V (D-S) MOSFET

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

UTT30N06L-TN3-R

1

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UTT30N06L-TN3-R датащи(PDF) 1 Page - VBsemi Electronics Co.,Ltd

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Аналогичный номер детали - UTT30N06L-TN3-R

Аналогичное описание - UTT30N06L-TN3-R

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