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SS560L датащи(PDF) 1 Page - First Silicon Co., Ltd |
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SS560L датащи(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 2 page ![]() Features ● Metal silicon junction, majority carrier conduction ● Guardring for overvoltage protection ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● For use in low voltage, high frequency inverters, free wheeling, and polarity protection application Mechanical Data ● Case: SMAF molded plastic body ● Terminals: Plated axial leads, solderable per MIL-STD-750, method 2026 ● Polarity: Color band denotes cathode end ● Mounting Position: Any ● Weight: 0.0027 grams (approximate) Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. PARAMETER SYMBOL SS560L UNITS Maximum repetitive peak reverse voltage V RRM 60 V Maximum RMS voltage V RMS 42 V Maximum DC blocking voltage V DC 60 V Average Rectified Output Current 0.375″ (9.5mm) lead length I o 5.0 A Peak forward surge current, 8.3 mS single half sine-wave superimposed on rated load I FSM 80 A Maximum instantaneous forward voltage at Io V F 0.52 V Maximum DC reverse current at rated DC blocking voltage @ TJ = 25℃ I R 0.5 mA Typical thermal resistance (Note 1) R θJA 55 ℃/W Operating junction temperature range T J -55 to +150 ℃ Storage temperature range T STG -55 to +150 ℃ Notes: 1. Thermal Resistance from Junction to Ambient 0.375”(9.5mm) lead length. 5A SCHOTTKY BARRIER RECTIFIER Reverse Voltage 60 Volts Forward Current 5.0 Amperes SEMICONDUCTOR TECHNICAL DATA SS560L 2019. 10. 24 1/2 Revision No : 0 |
Аналогичный номер детали - SS560L |
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Аналогичное описание - SS560L |
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