ZXMP6A17GTC datasheet(1/7 Pages) VBSEMI

номер детали	ZXMP6A17GTC

подробное описание детали	P-Channel 60-V (D-S) MOSFET

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P-Channel 60-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

100 % UIS Tested

APPLICATIONS

• Load Switch

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a

Qg (Typ.)

- 60

0.0

at VGS = - 10 V

-

30 nC

0.0

at VGS = - 4.5 V

-

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

-

a

A

TC = 70 °C

- 5.2

TA = 25 °C

.8b

TA = 70 °C

- .1b

Pulsed Drain Current

IDM

- 25

Avalanche Current Pulse

L = 0.1 mH

IAS

- 4

.5

Single Pulse Avalanche Energy

EAS

10

.1

mJ

Continuous Source-Drain Diode Current

TC = 25 °C

IS

6

.9a

A

TA = 25 °C

3.5b

Maximum Power Dissipation

TC = 25 °C

PD

10

.4a

W

TC = 70 °C

6

.6a

TA = 25 °C

2.1b

TA = 70 °C

1.1b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb

Steady State

RthJA

33

40

°C/W

Maximum Junction-to-Case

Steady State

RthJC

0.98

1.2

6.0

5

65

7.0

7

.0

- 4

4

SOT-223

G

D

S

D

5

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

ZXMP6A17GTC

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