IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072 4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

TestConditions

Characteristic Values

(T

Min. Typ.Max.

g

fs

V

35

45

S

C

iss

5400

pF

C

oss

V

1160

pF

C

rss

560

pF

t

d(on)

40

ns

t

r

V

55

ns

t

d(off)

R

120

ns

t

f

26

ns

Q

g(on)

280

nC

Q

gs

V

39

nC

Q

gd

135

nC

R

thJC

0.35

K/W

R

thCK

(TO-247 Package)

0.25

K/W

IXFH68N20 & IXFH74N80 characteristic curves can be found in the IXFK72N20/

IXFK80N20 data sheet.

Source-Drain Diode

Characteristic Values

(T

Symbol

TestConditions

Min.

Typ. Max.

I

S

V

68N20

68

A

74N20

74

A

I

SM

Repetitive;

68N20

272

A

pulse width limited by T

JM

74N20

296

A

V

SD

I

1.5

V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t

rr

200

ns

Q

RM

0.85

mC

8A

I

RM

I

-di/dt = 100 A/ms,

V

TO-247 AD (IXFH) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

ÆP

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Terminals:

1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3

TO-268 Outline

IXFH 68N20 IXFH 74N20

IXFT 68N20 IXFT 74N20

Min Recommended Footprint