LMS2301AL datasheet(2/3 Pages) LEIDITECH

номер детали	LMS2301AL

подробное описание детали	P-Channel Enhancement-Mode MOS FETs

PDF	3 Pages

Scroll/Zoom	100%

производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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ELECTRICAL CHARACTERISTICS 電特性

(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Characteristic

特性參數

Symbol

符號

Min

最小值

Typ

典型值

Max

最大值

Unit

單位

Drain-Source Breakdown Voltage

漏極-源極擊穿電壓

(ID = -250uA,VGS=0V)

BVDSS

-20

—

Gate Threshold Voltage

栅極開启電壓

(ID = -250uA,VGS= VDS)

VGS(th)

-0.4

—

-1.5

Diode Forward Voltage Drop

内附二極管正向壓降

(IS= -0.75A,VGS=0V)

VSD

—

-1.5

Zero Gate Voltage Drain Current

零栅壓漏極電流

(VGS=0V, VDS= -16V)

(VGS=0V, VDS= -16V, TA

=55℃)

IDSS

—

-1

-10

Gate Body Leakage

栅極漏電流

(VGS=+8V, VDS=0V)

IGSS

—

+100

Static Drain-Source On-State Resistance

静态漏源導通電阻

(ID= -2.4A,VGS= -4.5V)

RDS(ON)

—

140

mΩ

Static Drain-Source On-State Resistance

静态漏源導通電阻

(ID= -2A,VGS= -2.5V)

RDS(ON)

—

200

mΩ

Input Capacitance 輸入電容

(VGS=0V, VDS= -10V,f=1MHz)

CISS

—

600

—

Output Capacitance 輸出電容

(VGS=0V, VDS= -10V,f=1MHz)

COSS

—

120

—

Turn-ON Time 开启時間

(VDS= -10V, ID= -2.4A, RGEN=6Ω)

t(on)

—

Turn-OFF Time 关断時間

(VDS= -10V, ID= -2.4A, RGEN=6Ω)

t(off)

—

Pulse Width<300μs; Duty Cycle<2.0%

Rev :

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01.06.2015

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