SPC4527WS8RGB datasheet(2/14 Pages) VBSEMI

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

VGS = 0 V, ID = - 250 µA

P-Ch

- 0

VDS Temperature Coefficient

ΔVDS/TJ

ID = 250 µA

N-Ch

mV/°C

ID = - 250 µA

P-Ch

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

ID = 250 µA

N-Ch

- 4.1

ID = - 250 µA

P-Ch

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

2.2

VDS = VGS, ID = - 250 µA

P-Ch

0.9

- 2.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch

± 100

VDS = 0 V, VGS = ± 20 V

P-Ch

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 0 V, VGS = 0 V

N-Ch

µA

VDS = - 0 V, VGS = 0 V

P-Ch

- 1

VDS = 0 V, VGS = 0 V, TJ = 55 °C

N-Ch

VDS = - 0 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

N-Ch

VDS = - 5 V, VGS = - 10 V

P-Ch

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 6.8 A

N-Ch

0.015

VGS = - 10 V, ID = - 8 A

P-Ch

0.017

VGS = 8 V, ID = 6.7 A

N-Ch

VGS = - 8 V, ID = - 6.5 A

P-Ch

0.019

VGS = 4.5 V, ID = 6.6 A

N-Ch

0.018

VGS = - 4.5 V, ID = - 5 A

P-Ch

0.022

Forward Transconductanceb

gfs

VDS = 15 V, ID = 6.8 A

N-Ch

VDS = - 15 V, ID = - 6.7 A

P-Ch

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 20 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 20 V, VGS = 0 V, f = 1 MHz

N-Ch

1321

P-Ch

1345

Output Capacitance

Coss

N-Ch

745

P-Ch

792

Reverse Transfer Capacitance

Crss

N-Ch

214

P-Ch

245

Total Gate Charge

VDS = 20 V, VGS = 10 V, ID = 10 A

N-Ch

13.3

VDS = - 20 V, VGS = - 10 V, ID = - 10 A

P-Ch

N-Channel

VDS = 20 V, VGS = 4.5 V, ID = 10 A

P-Channel

VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A

N-Ch

6.5

P-Ch

21.7

Gate-Source Charge

Qgs

N-Ch

2.3

P-Ch

5.6

Gate-Drain Charge

Qgd

N-Ch

1.7

P-Ch

9.8

Gate Resistance

f = 1 MHz

N-Ch

0.3

1.3

2.6

P-Ch

1.3

6.4

12.8

0.016

-30

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