LM2301C datasheet(2/5 Pages) LEIDITECH

номер детали	LM2301C

подробное описание детали	P-Channel Enhancement Mode Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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2 / 5 page

■ Electrical Characteristics (TJ=25℃ unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

BVDSS

VGS= 0V, ID=-250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-20V,VGS=0V,TC=25℃

-1

μA

Gate-Body Leakage Current

IGSS

VGS= ±10V, VDS=0V

±100

Gate Threshold Voltage

VGS(th)

VDS= VGS, ID=-250μA

-0.4

-0.62

-1.0

Static Drain-Source On-Resistance

RDS(ON)

VGS= -4.5V, ID=-3.4A

mΩ

VGS= -2.5V, ID=-3A

VGS= -1.8V, ID=-2.5A

Diode Forward Voltage

VSD

IS=-3.4A,VGS=0V

-0.8

-1.2

Maximum Body-Diode Continuous Current

-3.4

Dynamic Parameters

Input Capacitance

Ciss

VDS=-10V,VGS=0V,f=1MHZ

550

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching Parameters

Total Gate Charge

VGS=-4.5V,VDS=-10V,ID=-3.4A

4.3

Gate Source Charge

Qgs

0.8

Gate Drain Charge

Qgd

1.1

Turn-on Delay Time

tD(on)

VGS=-4.5V,VDD=-10V, ID=-1A,

RGEN=2.5Ω

Turn-on Rise Time

Turn-off Delay Time

tD(off)

Turn-off Fall Time

Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.

Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.

LM2301C

Rev :

www.leiditech.com

01.06.2018

2/5

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