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JCS4N60RB-O-R-N-B датащи(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

номер детали JCS4N60RB-O-R-N-B
подробное описание детали  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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производитель  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
домашняя страница  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

JCS4N60RB-O-R-N-B датащи(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
600
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=600V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=2.75A
---
---
1.5
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
620
810
pF
Coss
Output Capacitance
---
65
85
Crss
Reverse Transfer Capacitance
---
7
10
Switching Characteristics
td(on)
Turn-On Delay Time
3,4
VDS=300V, ID=5.5A,
RGEN=25Ω
---
15
40
ns
tr
Rise Time
3,4
---
45
100
ns
td(off)
Turn-Off Delay Time
3,4
---
45
100
ns
tf
Fall Time
3,4
---
45
100
ns
Qg
Total Gate Charge
3,4
VGS=10V, VDS=480V,
ID=5.5A
---
16
20
nC
Qgs
Gate-Source
Charge
3,4
---
3.5
---
nC
Qgd
Gate-Drain “Miller” Charge
3,4
---
6.5
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,ID=5.5A
---
---
1.25
V
JCS4N60RB-O-R-N-B



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