LCE3415 datasheet(2/5 Pages) LEIDITECH

номер детали	LCE3415

подробное описание детали	P-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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2 / 5 page

■ Electrical Characteristics (TJ=25℃ unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

BVDSS

VGS= 0V, ID=-250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-20V,VGS=0V,TC=25℃

-1

μA

Gate-Body Leakage Current

IGSS

VGS= ±12V, VDS=0V

±15

μA

VGS= ±10V, VDS=0V

1.5

±5

μA

VGS= ±5V, VDS=0V

±200

Gate Threshold Voltage

VGS(th)

VDS= VGS, ID=-250μA

-0.35

-0.57

-1.0

Static Drain-Source On-Resistance

RDS(ON)

VGS= -4.5V, ID=-5.6A

mΩ

VGS= -2.5V, ID=-4.3A

VGS= -1.8V, ID=-3.0A

Diode Forward Voltage

VSD

IS=-5.6A,VGS=0V

-0.8

-1.2

Maximum Body-Diode Continuous Current

-5.6

Dynamic Parameters

Input Capacitance

Ciss

VDS=-10V,VGS=0V,f=1MHZ

940

Output Capacitance

Coss

219

Reverse Transfer Capacitance

Crss

116

Switching Parameters

Total Gate Charge

VGS=-4.5V,VDD=-10V,ID=-4A

7.2

Gate Source Charge

Qgs

1.2

Gate Drain Charge

Qgd

1.6

Turn-on Delay Time

tD(on)

VGS=-4.5V,VDD=-10V, RL=2.5Ω,

RGEN=3Ω

Turn-on Rise Time

Turn-off Delay Time

tD(off)

Turn-off Fall Time

Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.

Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.

LCE3415

Rev :

www.leiditech.com

01.06.2018

2/5

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