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2SB1221 датащи(PDF) 1 Page - Panasonic Semiconductor

номер детали 2SB1221
подробное описание детали  Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)
PDF  3 Pages
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производитель  PANASONIC [Panasonic Semiconductor]
домашняя страница  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SB1221 датащи(HTML) 1 Page - Panasonic Semiconductor

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1
Transistor
2SC3941
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SB1221
s Features
q
High collector to emitter voltage VCEO.
q
High transition frequency fT.
q
Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO–92NL Package
5.0
±0.2
1.27
123
1.27
4.0
±0.2
0.45
+0.15
–0.1
0.45
+0.15
–0.1
0.7
±0.1
2.54
±0.15
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
300
300
7
100
70
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
Conditions
VCB = 100V, IE = 0
IC = 100µA, IB = 0
IE = 1µA, IC = 0
VCB = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
300
7
30
50
typ
80
4
max
2
220
1.2
8
Unit
µA
V
V
V
MHz
pF
*h
FE Rank classification
Rank
P
Q
R
hFE
30 ~ 100
60 ~ 150
100 ~ 220


Аналогичный номер детали - 2SB1221

производительномер деталидатащиподробное описание детали
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Аналогичное описание - 2SB1221

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