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AS4LC2M8S1 датащи(PDF) 20 Page - Alliance Semiconductor Corporation

номер детали AS4LC2M8S1
подробное описание детали  3.3V 2M x 8/1M x 16 CMOS synchronous DRAM
PDF  28 Pages
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производитель  ALSC [Alliance Semiconductor Corporation]
домашняя страница  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC2M8S1 датащи(HTML) 20 Page - Alliance Semiconductor Corporation

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AS4LC2M8S1
AS4LC1M16S1
read interrupted by write (CL = 2, BL = 4)
To prevent bus contention, maintain a gap between data in and data out.
read interrupted by write (CL = 3, BL = 4)
To prevent bus contention, maintain a gap between data in and data out.
Burst termination
Burst operations may be terminated with a Read, Write, Burst Stop, or Precharge command. When Burst Stop is asserted during the read
cycle, burst read data is terminated and the data bus goes to High Z after CAS latency. When Burst Stop is asserted during the write cycle,
burst write data is terminated and the databus goes to High Z simultaneously.
CLK
CMD1
DQM1
DQ1
CMD2
DQM2
DQ2
CMD3
DQM3
DQ3
CMD4
DQM4
DQ4
Write data
D0
D1
D2
D3
Read data
Write data
D0
D1
D2
D3
Read data
Write data
D0
D1
D2
D3
Read data
Write data
D0
D1
D2
D3
Q0
Read data
CLK
CMD1
DQ1
CMD2
DQM2
DQ2
CMD3
DQM3
DQ3
CMD4
DQM4
DQ4
Read data
Write data
Read data
Write data
Read data
Write data
Read data
Write data
D0
D1
D2
D3
DQM1
tCCD
D0
D1
D2
D3
D0
D1
D2
D3
D0
D1
D2
D3



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