2003 Nov 07

5

Philips Semiconductors

Product specification

Low-leakage diode

BAS716

handbook, halfpage

200

0

50

100

150

10

1

MDB826

IR

(nA)

Tj (°C)

(1)

(2)

Fig.5

Reverse current as a function of junction

temperature.

(1) Maximum values.

(2) Typical values.

handbook, halfpage

0

5

10

20

2.0

1.5

0.5

0

1.0

15

MDB827

Cd

(pF)

VR (V)

Fig.6

Diode capacitance as a function of reverse

voltage; typical values.

handbook, full pagewidth

t rr

(1)

I F

t

output signal

t r

t

t p

10%

90%

VR

input signal

V = V

I x R

RF

S

R = 50

S

Ω

IF

D.U.T.

R = 50

i

Ω

SAMPLING

OSCILLOSCOPE

MGA881

Fig.7 Reverse recovery voltage test circuit and waveforms.