7N20ZL-TN3-R datasheet(1/5 Pages) DOINGTER

номер детали	7N20ZL-TN3-R

подробное описание детали	N-Channel MOSFET uses advanced trench technology

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производитель	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=200V,ID=5A,RDS(ON)≤0.47Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

200

V

VGS

Gate-Source Voltage

±30

V

ID

Continuous Drain Current-TC=25℃

5

A

Continuous Drain Current-TC=100℃

3.1

Pulsed Drain Current

---

EAS

Single Pulse Avalanche Energy

1

60

mJ

PD

Power Dissipation(TC=25℃)

32

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

2.27

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

110

D

S

G

7N20ZL-TN3-R

Аналогичный номер детали - 7N20ZL-TN3-R

производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	7N20ZL-TN3-R	217Kb / 5P	7A, 200V N-CHANNEL POWER MOSFET

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Аналогичное описание - 7N20ZL-TN3-R

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7N20ZL-TN3-R датащи(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Аналогичный номер детали - 7N20ZL-TN3-R

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