LM2102W datasheet(2/5 Pages) LEIDITECH

номер детали	LM2102W

подробное описание детали	N-ChannelEnhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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2 / 5 page

■ Electrical Characteristics (TJ=25℃ unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

BVDSS

VGS= 0V, ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V,TC=25℃

μA

Gate-Body Leakage Current

IGSS

VGS= ±10V, VDS=0V

±100

Gate Threshold Voltage

VGS(th)

VDS= VGS, ID=250μA

0.55

0.78

1.1

Static Drain-Source On-Resistance

RDS(ON)

VGS= 4.5V, ID=2.5A

mΩ

VGS= 2.5V, ID=2.0A

Diode Forward Voltage

VSD

IS=2.5A,VGS=0V

1.2

Maximum Body-Diode Continuous Current

2.5

Dynamic Parameters

Input Capacitance

Ciss

VDS=10V,VGS=0V,f=1MHZ

280

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching Parameters

Total Gate Charge

VGS=4.5V,VDS=10V,ID=2.5A

2.9

Gate Source Charge

Qgs

0.4

Gate Drain Charge

Qgd

0.6

Turn-on Delay Time

tD(on)

VGS=4.5V,VDD=10V, RL=1.5Ω,

RGEN=3Ω

Turn-on Rise Time

Turn-off Delay Time

tD(off)

Turn-off Fall Time

Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.

Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.

LM2102W

Rev :

www.leiditech.com

01.06.2018

2/5

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