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2SC3757 датащи(PDF) 1 Page - Panasonic Semiconductor |
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2SC3757 датащи(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page ![]() Transistors 1 2SC3757 Silicon NPN epitaxial planer type For high speed switching I Features • High-speed switching • Low collector to emitter saturation voltage V CE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. • Allowing pair use with 2SA1738 I Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCES 40 V Emitter to base voltage VEBO 5V Peak collector current ICP 300 mA Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Marking Symbol: 2Y Unit: mm 0.40 +0.10 –0.05 2 1 3 (0.95) (0.95) 1.9±0.1 2.90 +0.20 –0.05 0.16 +0.10 –0.06 10 ° 1: Base JEDEC: TO-236 2: Emitter EIAJ: SC-59 3: Collector Mini Type Package Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = 15 V, I E = 0 0.1 µA Emitter cutoff current IEBO VEB = 4 V, I C = 0 0.1 µA Forward current transfer ratio * hFE VCE = 1 V, IC = 10 mA 60 200 Collector to emitter saturation voltage VCE(sat) IC = 10 mA, I B = 1 mA 0.17 0.25 V Base to emitter saturation voltage VBE(sat) IC = 10 mA, I B = 1 mA 1.0 V Transition frequency fT VCB = 10 V, IE = −10 mA, f = 200 MHz 450 MHz Collector output capacitance Cob VCB = 10 V, I E = 0, f = 1 MHz 2 6 pF Turn-on time ton 17 ns Turn-off time toff Refere to the measurement circuit 17 ns Storage time tstg 10 ns I Electrical Characteristics T a = 25°C ± 3°C Note) *: Rank classification Rank Q R hFE 60 to 120 90 to 200 Marking symbol 2YQ 2YR |
Аналогичный номер детали - 2SC3757 |
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Аналогичное описание - 2SC3757 |
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