2-1
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
4
GND
GND
3
2
1
5
7
8
9
10
6
Bias
VMODE
VREG
VCC1
RF IN
GND
GND
RF OUT
VCC2
RF6100-4
3V 1900MHZ LINEAR POWER AMPLIFIER
MODULE
• 3V CDMA US-PCS Handset
• 3V CDMA2000/1XRTT US-PCS Handset
• 3V CDMA2000/1X-EV-DO US-PCS
Handset
• Spread-Spectrum System
The RF6100-4 is a high-power, high-efficiency linear
amplifier module specifically designed for 3V handheld
systems. The device is manufactured on an advanced
third generation GaAs HBT process, and was designed
for use as the final RF amplifier in 3V IS-95/CDMA 2000
1X handheld digital cellular equipment, spread-spectrum
systems, and other applications in the 1850MHz to
1910MHz band. The RF6100-4 has a digital control line
for low power applications to lower quiescent current. The
device is self-contained with 50
Ω input and output that is
matched to obtain optimum power, efficiency and linear-
ity. The module is a 4mmx4mm land grid array with back-
side ground. The RF6100-4 is footprint compatible with
industry standard 4mmx4mm CDMA modules, and
requires only one decoupling capacitor.
• Input/Output Internally Matched@50
Ω
• 28.5dBm Linear Output Power
• 39% Peak Linear Efficiency
• 28dB Linear Gain
• -48dBc ACPR @ 1.25MHz
RF6100-4
3V 1900MHz Linear Power Amplifier Module
RF6100-4 PCBA
Fully Assembled Evaluation Board
0
Rev A0 031217
1
4.00
± 0.10
4.00
± 0.10
1.40
1.25
0.450
± 0.075
Shaded areas represent pin 1 location.
Dimensions in mm.
1
0.000
0.103 TYP
0.155
1.455
1.475 TYP
1.805 TYP
2.205 TYP
2.653
3.053
3.453 TYP
3.903 TYP
3.850
3.050
2.825
2.600
2.053
2.418
1.953
1.353
0.953
0.553
0.155
Package Style: Module (4mmx4mm)
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