4.4A, 500V, 1.5Ω

N-CHANNEL POWER MOSFET

DESCRIPTION

FEATURES

=1.5Ω

* Rugged - SOA is Power Dissipation Limited

* Fast Switching Speeds

SYMBOL

2015. 06. 26

1/7

SEMICONDUCTOR

TECHNICAL DATA

IRF830/F

Revision No : 0

* Single Pulse Avalanche EnergyRated

* Linear Transfer Characteristics

* High Input Impedance

G

D

S

IRF830 is 500V High voltage N-Channel enhancement

mode power MOS-FET chip fabricated in advanced

silicon epitaxial planar technology;

Advanced termination scheme to provide enhanced voltage-

blocking capability;

Avalanche Energy Specified;

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode;

IRF830 product is widely used in AC-DC power

suppliers, DC-DC converters and H-bridge PWM motor

drivers.

Power MOS FET

TO - 220

1

1

TO - 220F

P :

F :

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

1

2

3

Packing

IRF830

TO-220

G

D

S

Tube

IRF830F

TO-220F

G

D

S

Tube

Note: Pin Assignment:

G: Gate

D: Drain

S: Source