LM3134KT datasheet(2/4 Pages) LEIDITECH

номер детали	LM3134KT

подробное описание детали	N-Channel Enhancement Mode Fidld Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

производитель	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

домашняя страница	http://www.leiditech.com

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2 / 4 page

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Electrical Characteristics (TJ=25℃ unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

BVDSS

VGS= 0V, ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS= ±10V, VDS=0V

2.5

μA

VGS= ±8V, VDS=0V

500

2000

Gate Threshold Voltage

VGS(th)

VDS= VGS, ID=250μA

0.35

0.75

1.1

Static Drain-Source On-Resistance

RDS(ON)

VGS= 4.5V, ID=0.65A

130

250

mΩ

VGS= 2.5V, ID=0.3A

180

350

Diode Forward Voltage C

VSD

IS=0.5A,VGS=0V

1.2

Maximum Body-Diode Continuous Current

0.75

Dynamic Parameters B

Input Capacitance

Ciss

VDS=10V,VGS=0V,f=1MHZ

110

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching Parameters B

Total Gate Charge

VGS=4.5V,VDS=10V,ID=0.5A

1.1

Gate Source Charge

Qgs

0.19

Gate Drain Charge

Qgd

0.27

Turn-on Delay Time

tD(on)

VGS=4.5V,VDD=10V,RG=10Ω,ID=0.5A

6.7

Turn-on Rise Time

4.8

Turn-off Delay Time

tD(off)

17.3

Turn-off Fall Time

7.4

A. Repetitive Rating: Pulse width limited by maximum junction temperature.

B. These parameters have no way to verify.

C. Pulse Test: Pulse Width≤300us, Duty Cycle≤0.5%.

LM3134KT

Rev :

www.leiditech.com

01.06.2018

2/4

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