FTV10BLUL2 datasheet(2/4 Pages) FS

номер детали	FTV10BLUL2

подробное описание детали	ESD Protection Diodes with Ultra?묹ow Capacitance

PDF	4 Pages

Scroll/Zoom	100%

производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

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2 / 4 page

2015. 12. 10

2/4

Revision No : 0

FTV10BLUL2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Device

Marking

VRWM

(V)

IR(uA)

@ VRWM

VBR (V) @ IT

(Note 2)

C (pF)

VC (V)

@ IPP = 1.65 A

(Note 3)

Max

Min

Max

Per IEC61000−4−2

(Note 4)

FTV10BLUL2

1.0

1.8

24.5

Figures 1 and 2

See Below

2. VBR is measured with a pulse test current IT at an ambient temperature of 25℃.

3. Surge current waveform per Figure 4.

4. For test procedure see Figures 3.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Reverse standoff voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

VTRIG

Reverse trigger voltage

ITRIG

Reverse trigger current

−Directional TVS

IPP

TRIGVC

VRWM

TR G

R G

TRIG

VC V

V VRWM

GND

vertical scale = 20 V/div

horizontal scale = 50 ns/div

GND

vertical scale = 20 V/div

horizontal scale = 50 ns/div

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