2SC2634 datasheet(1/2 Pages) PANASONIC

номер детали	2SC2634

подробное описание детали	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

PDF	2 Pages

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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1

Transistor

2SC2634

Silicon NPN epitaxial planer type

For low-frequency and low-noise amplification

Complementary to 2SA1127

s Features

q

Low noise voltage NV.

q

High foward current transfer ratio hFE.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

JEDEC:TO–92

EIAJ:SC–43A

5.0

±0.2

4.0

±0.2

0.45

+0.2

–0.1

0.45

+0.2

–0.1

1.27

2.54

±0.15

2

13

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

60

55

7

200

100

400

150

–55 ~ +150

Unit

V

mA

mW

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

Transition frequency

Noise voltage

Symbol

ICBO

ICEO

VCBO

VCEO

VEBO

hFE

*

VCE(sat)

VBE

fT

NV

Conditions

VCB = 10V, IE = 0

VCE = 10V, IB = 0

IC = 10µA, IE = 0

IC = 1mA, IB = 0

IE = 10µA, IC = 0

VCE = 5V, IC = 2mA

ICE = 100mA, IB = 10mA

VCE = 1V, IC = 30mA

VCB = 5V, IE = –2mA, f = 200MHz

VCE = 10V, IC = 1mA, GV = 80dB

Rg = 100kΩ, Function = FLAT

min

60

55

7

180

typ

1

0.01

200

max

100

1

700

0.6

1

150

Unit

nA

µA

V

MHz

mV

*h

FE Rank classification

Rank

R

S

T

hFE

180 ~ 360

260 ~ 520

360 ~ 700

Аналогичный номер детали - 2SC2634

производитель	номер детали	датащи	подробное описание детали
Mitsubishi Electric Sem...	2SC2630	135Kb / 3P	NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)?
Panasonic Semiconductor	2SC2631	36Kb / 2P	Silicon PNP epitaxial planer type
	2SC2631	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC2632	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
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Аналогичное описание - 2SC2634

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SB1036	37Kb / 2P	Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)
	2SB745	50Kb / 3P	Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)
	2SC3311A	36Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency amplification)
	2SC3312	37Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
	2SD1030	37Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency amplification)
	2SD1149	39Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency amplification)
	2SD1199	39Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency amplification)
	2SD1458	37Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency amplification)
	2SD1993	40Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
	2SD661	51Kb / 3P	Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

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Аналогичный номер детали - 2SC2634

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