2SC2632 datasheet(1/2 Pages) PANASONIC

номер детали	2SC2632

подробное описание детали	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)

PDF	2 Pages

Scroll/Zoom	100%

производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

Logo

1 / 2 page

1

Transistor

2SC2632

Silicon NPN epitaxial planer type

For low-frequency high breakdown voltage amplification

Complementary to 2SA1124

s Features

q

Satisfactory linearity of forward current transfer ratio hFE.

q

High collector to emitter voltage VCEO.

q

Small collector output capacitance Cob.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

EIAJ:SC–51

TO–92L Package

5.9

±0.2

2.54

±0.15

0.7

±0.1

4.9

±0.2

0.45

+0.2

–0.1

1.27

0.45

+0.2

–0.1

13

2

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

150

5

100

50

1

150

–55 ~ +150

Unit

V

mA

W

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Noise voltage

Symbol

ICBO

VCEO

VEBO

hFE

*

VCE(sat)

fT

Cob

NV

Conditions

VCB = 100V, IE = 0

IC = 0.1mA, IB = 0

IE = 10µA, IC = 0

VCE = 5V, IC = 10mA

IC = 30mA, IB = 3mA

VCB = 10V, IE = –10mA, f = 200MHz

VCB = 10V, IE = 0, f = 1MHz

VCE = 10V, IC = 1mA, GV = 80dB

Rg = 100kΩ, Function = FLAT

min

150

5

130

typ

160

150

max

1

330

1

3

300

Unit

µA

V

MHz

pF

mV

*h

FE Rank classification

Rank

R

S

hFE

130 ~ 220

185 ~ 330

Аналогичный номер детали - 2SC2632

производитель	номер детали	датащи	подробное описание детали
Foshan Blue Rocket Elec...	2SC2632	958Kb / 6P	Silicon NPN transistor in a TO-92LM Plastic Package

More results

Аналогичное описание - 2SC2632

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SC2631	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC4715	34Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC5190	37Kb / 2P	Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)
	2SC5346	36Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification)
	2SC5363	37Kb / 2P	Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification)
	2SD1030	37Kb / 2P	Silicon NPN epitaxial planer type(For low-frequency amplification)
	2SD1821	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
	2SD662	39Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)
	2SD814	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
	2SD958	37Kb / 2P	Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)

More results

2SC2632 датащи(PDF) 1 Page - Panasonic Semiconductor

2SC2632 датащи(HTML) 1 Page - Panasonic Semiconductor

Аналогичный номер детали - 2SC2632

Аналогичное описание - 2SC2632

Html Pages

1 2

датащи скачать

ссылки URL