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FTK6965AP датащи(PDF) 2 Page - First Silicon Co., Ltd

номер детали FTK6965AP
подробное описание детали  60V P-Channel MOSFETs
PDF  5 Pages
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производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK6965AP датащи(HTML) 2 Page - First Silicon Co., Ltd

  FTK6965AP Datasheet HTML 1Page - First Silicon Co., Ltd FTK6965AP Datasheet HTML 2Page - First Silicon Co., Ltd FTK6965AP Datasheet HTML 3Page - First Silicon Co., Ltd FTK6965AP Datasheet HTML 4Page - First Silicon Co., Ltd FTK6965AP Datasheet HTML 5Page - First Silicon Co., Ltd  
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60V P-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25
℃ , ID=
-1mA
---
-0.04
---
V/
℃
IDSS
Drain-Source Leakage Current
VDS=-60V , VGS=0V , TJ=25
℃
---
---
-1
uA
VDS=-48V , VGS=0V , TJ=85
℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=
±20V , VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V , ID=-15A
---
18
22
mΩ
VGS=-6V , ID=-8A
---
30
40
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-2
-3
-4
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
7
---
mV/
℃
gfs
Forward Transconductance
VDS=-10V , ID=-5A
---
10
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3,4
VDS=-48V , VGS=-10V , ID=-10A
---
37.2
55
nC
Qgs
Gate-Source Charge3,4
---
10.4
15
Qgd
Gate-Drain Charge3,4
---
10.5
16
Td(on)
Turn-On Delay Time3,4
VDD=-48V , VGS=-10V , RG=25Ω
ID=-5A
---
23.1
46
ns
Tr
Rise Time3,4
---
76.2
150
Td(off)
Turn-Off Delay Time3,4
---
113.5
220
Tf
Fall Time3,4
---
28.6
56
Ciss
Input Capacitance
VDS=-25V , VGS=0V , F=1MHz
---
2165
3200
pF
Coss
Output Capacitance
---
318
480
Crss
Reverse Transfer Capacitance
---
102
150
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-61
A
ISM
Pulsed Source Current
---
---
-122
A
VSD
Diode Forward Voltage
VGS=0V , IS=-1A , TJ=25
℃
---
---
-1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=-30V,VGS=-10V,L=0.1mH,IAS=-70A.,Starting TJ=25
℃
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
FTK6965AP
2018. 11. 30
2/5
Revision No : 0



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