60V P-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

-60

V

Gate-Sou

rce Voltage

±20

V

Drain Current – Continuous (Tc=25℃)

-12

A

Drain Current – Continuous (Tc=100℃)

-7.6

A

-13.2

A

EAS

31

mJ

IAS

-25

A

33.8

W

Power Dissipation – Derate above 25℃

0.27

W/℃

Storage Temperature Range

-50 to 150

℃

Operating Junction Temperature Range

-50 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

3.7

℃/W

BVDSS

RDSON

ID

-60V

72m

Ω

-12A

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 -60V,-12A, RDS(ON) =72m

Ω@VGS = -10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green Device Available

General Description

Features

Applications

 Motor Drive

 Power Tools

 LED Lighting

Thermal Characteristics

PPAK3X3 Pin Configuration

D

S

G

D

G

S

D

D

D

S

S

1

5

4

8

2018. 12. 10

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK6907Z