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FTK6904Z датащи(PDF) 2 Page - First Silicon Co., Ltd

номер детали FTK6904Z
подробное описание детали  60V N-Channel MOSFETs
PDF  5 Pages
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производитель  FS [First Silicon Co., Ltd]
домашняя страница  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK6904Z датащи(HTML) 2 Page - First Silicon Co., Ltd

  FTK6904Z Datasheet HTML 1Page - First Silicon Co., Ltd FTK6904Z Datasheet HTML 2Page - First Silicon Co., Ltd FTK6904Z Datasheet HTML 3Page - First Silicon Co., Ltd FTK6904Z Datasheet HTML 4Page - First Silicon Co., Ltd FTK6904Z Datasheet HTML 5Page - First Silicon Co., Ltd  
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60V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25
℃ , ID=1mA
---
0.03
---
V/
℃
IDSS
Drain-Source Leakage Current
VDS=60V , VGS=0V , TJ=25
℃
---
---
1
uA
VDS=48V , VGS=0V , TJ=125
℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=
±20V , VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V , ID=10A
---
10
12
mΩ
VGS=4.5V , ID=8A
---
12
15
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.6
2.2
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4
---
mV/
℃
gfs
Forward Transconductance
VDS=10V , ID=6A
---
11.7
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=30V , VGS=10V , ID=10A
---
39.2
59
nC
Qgs
Gate-Source Charge3 , 4
---
5.9
9
Qgd
Gate-Drain Charge3 , 4
---
8.8
14
Td(on)
Turn-On Delay Time3 , 4
VDD=15V , VGS=10V , RG=6Ω
ID=1A
---
9.6
18
ns
Tr
Rise Time3 , 4
---
28.2
54
Td(off)
Turn-Off Delay Time3 , 4
---
45.3
86
Tf
Fall Time3 , 4
---
10.9
21
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
2100
3050
pF
Coss
Output Capacitance
---
165
240
Crss
Reverse Transfer Capacitance
---
80
120
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.6
3.2
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
42
A
ISM
Pulsed Source Current3
---
---
84
A
VSD
Diode Forward Voltage3
VGS=0V , IS=1A , TJ=25
℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=35A.,RG=25Ω
,Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings
Electrical Characteristics (TJ=25℃, unless otherwise noted)
FTK6904Z
2019. 02. 22
2/5
Revision No : 0



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